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Resumen

 

ALUMINUM INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

CRISTALIZACIÓN DE PELÍCULAS AMORFAS INDUCIDAS POR ALUMINIO
Ricardo Pérez-Blanco1,2, Alfonso Torres-Jacome1 y Francisco Enríquez-Aguilera.

Abstrac: In this work we present the crystallization effect in the phosphorous-doped hydrogenated amorphous silicon (n+ a-Si:H), this crystallization is due to aluminuminduced.Thin films of n+ a-Si:H were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). After the drop of the aluminum films on the n+ a-Si:H, the samples were annealing in furnace at 250 °C in nitrogen ambient for oxidation avoid. In this experiment we varied the annealing time. Raman spectroscopy was used to study the surface morphology and found evidence of the change in the structural internal of the films. The change of amorphous to microcrystalline phase transition is attributed to aluminum-induced and the annealing time.

Resumen: En este trabajo se presenta la cristalización de las películas de silicio amorfo hidrogenado dopado con fósforo (n+ a-Si:H), esta cristalización es inducida por aluminio. Las películas de n+ a-Si:H fueron depositadas usando un proceso químico en fase vapor asistido por plasma (PECVD). Después de depositar el aluminio sobre las películas de n+ a-Si:H, las muestras se introdujeron en un horno a 250 °C en un ambiente de nitrógeno para evitar la oxidación. En este experimento se varió el tiempo de permanencia de las muestras dentro del horno (recocido). La espectroscopia Raman se utilizó para estudiar la morfología estructural de las películas y se encontró evidencia del cambio de fase amorfa a la fase microcristalina. Este cambio de fase se atribuyo al aluminio y al tiempo de recocido. 


Palabras Clave: Amorphous Silicon, Crystallization, Annealing Time.